- WKN: A0WMPJ
- ISIN: DE000A0WMPJ6
- Land: Deutschland
Nachricht vom 17.05.2022 | 09:38
AIXTRON provides key deposition equipment for advanced research to Micron Center for Materials Research / CCS 3x2 system for 2D materials and GaN-structures goes to the Boise State University, Idaho
AIXTRON provides key deposition equipment for advanced research to Micron Center for Materials Research
Herzogenrath, May 10, 2022 – AIXTRON SE (FSE: AIXA, ISIN DE000A0WMPJ6), a leading provider of deposition equipment to the semiconductor industry, announced today that AIXTRON Ltd, a subsidiary of AIXTRON SE, will deliver a deposition system from their Close Coupled Showerhead® Metal-Organic Chemical Vapor Deposition (CCS® MOCVD) product range for compound semiconductor materials to the Boise State University. The CCS® 3x2 is an essential part of an infrastructure expansion awarded to Boise State University.
The AIXTRON CCS 3x2 being delivered to Boise has a capacity of 3x2” wafers. The system will have a maximum operating temperature of 1400 C which will enable the deposition of graphene and hBN on sapphire as well as novel structures for GaN-based UV LED’s. Equipped with a wide variety of metal-organic and gas channels the system will enable Boise State University to deposit the most advanced 2D materials. In addition, the system includes AIXTRON’s proprietary ARGUS and EPISON in-situ metrology technologies which are proven key enablers for the uniform, repeatable wafer scale growth of 2D materials.
With help of the CCS 3x2 Boise State aims to enable up-to-date manufacturing of advanced flexible hybrid electronics using 2D-3D heterostructures. The goal is to use the AIXTRON system to research and overcome the challenges of large-scale synthesis and integration of 2D materials into full semiconductor device process flows.
“The AIXTRON system is a major part of our research infrastructure expansion. The AIXTRON Close Coupled Showerhead Metal-Organic Vapor Phase Epitaxy system is capable of wafer scale growth of atomically thin semiconductor materials as well as more traditional semiconductor films”, says David Estrada, Boise State`s Associate Director for the Center for Advanced Energy Studies and Associate Professor in the Micron School of Materials Science and Engineering.
The AIXTRON CCS 3x2 tool is expected to be the only system at a U.S. university dedicated and configured for wafer scale 2D and Nitride-based compound semiconductor growth. It will prepare the future semiconductor workforce at the undergraduate and graduate levels for the U.S. based semiconductor industry.
In close cooperation with AIXTRON, the Boise State research team will leverage unique material properties, artificial intelligence algorithms and trailblazing microfabrication techniques for the creation of novel technologies that will drive future applications.
“We are happy to tighten our bonds with the Unites States and the academic world by providing an industrial-grade R&D reactor to Boise State University. Our CCS 3x2 equipment delivers best in class results for 2D-materials at wafer scale in multiple applications. It is also the only system technology that can be configured for combined 2D and GaN research while also allowing the growth of van-der-Waals heterostructures”, explains Prof. Dr. Michael Heuken, Vice President Advanced Technologies at AIXTRON.
AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The Company was founded in 1983 and is headquartered in Herzogenrath (near Aachen), Germany, with subsidiaries and sales offices in Asia, United States and in Europe. AIXTRON´s technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and optoelectronic applications based on compound semiconductor materials. Such components are used in a broad range of innovative applications, technologies and industries. These include Laser and LED applications, display technologies, data transmission, SiC and GaN power management and conversion, communication, signaling and lighting as well as a range of other leading-edge applications.
Our registered trademarks: AIXACT®, AIXTRON®, , Close Coupled Showerhead®, EXP®, EPISON®, Gas Foil Rotation®, OptacapTM, OVPD®, Planetary Reactor®, PVPD®, STExS®, TriJet®
For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6) please visit our website at: www.aixtron.com
This document may contain forward-looking statements regarding the business, results of operations, financial condition and earnings outlook of AIXTRON. These statements may be identified by words such as “may”, “will”, “expect”, “anticipate”, “contemplate”, “intend”, “plan”, “believe”, “continue” and “estimate” and variations of such words or similar expressions. These forward-looking statements are based on our current assessments, expectations and assumptions, of which many are beyond control of AIXTRON, and are subject to risks and uncertainties. You should not place undue reliance on these forward-looking statements. Should these risks or uncertainties materialize, or should underlying expectations not occur or assumptions prove incorrect, actual results, performance or achievements of AIXTRON may materially vary from those described explicitly or implicitly in the relevant forward-looking statement. This could result from a variety of factors, such as actual customer orders received by AIXTRON, the level of demand for deposition technology in the market, the timing of final acceptance of products by customers, the condition of financial markets and access to financing for AIXTRON, general conditions in the market for deposition plants and macroeconomic conditions, cancellations, rescheduling or delays in product shipments, production capacity constraints, extended sales and qualification cycles, difficulties in the production process, the general development in the semi-conductor industry, increased competition, fluctuations in exchange rates, availability of public funding, fluctuations and/or changes in interest rates, delays in developing and marketing new products, a deterioration of the general economic situation and any other factors discussed in any reports or other announcements , in particular in the chapter Risks in the Annual Report, filed by AIXTRON. Any forward-looking statements contained in this document are based on current expectations and projections of the executive board based on information available the date hereof. AIXTRON undertakes no obligation to revise or update any forward-looking statements as a result of new information, future events or otherwise, unless expressly required to do so by law.
This document is an English language translation of a document in German language. In case of discrepancies, the German language document shall prevail and shall be the valid version.
End of Media Release
Issuer: AIXTRON SE
Key word(s): Research/Technology
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